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| 铌酸锂低半波电压电光调制器研究 | |
| 引用本文： | 陈硕,刘占元,牛晓晨,李学鹏,陈开鑫. 铌酸锂低半波电压电光调制器研究[J]. 半导体光电, 2017, 38(3): 342-344. DOI: 10.16818/j.issn1001-5868.2017.03.008 |
| 作者姓名： | 陈硕 刘占元 牛晓晨 李学鹏 陈开鑫 |
| 作者单位： | 全球能源互联网研究院,北京,102209;电子科技大学通信与信息工程学院,成都,611731 |
| 摘 要： | 对降低铌酸锂(LN)电光调制器的半波电压进行了研究,探索了利用反射结构实现低半波电压的原理.通过退火质子交换工艺在x切LN晶片上制作了反射结构的LN电光调制器.测试表明,这种反射结构的LN电光调制器在保持器件长度不变的条件下可以降低半波电压. |
| 关 键 词： | 铌酸锂 电光调制器 退火质子交换 半波电压 反射结构 |
| 收稿时间： | 2016-09-19 |
Study on Low Half-wave Voltage Electro-optic Modulator Based on Lithium Niobate |
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| CHEN Shuo,LIU Zhanyuan,NIU Xiaochen,LI Xuepeng,CHEN Kaixin. Study on Low Half-wave Voltage Electro-optic Modulator Based on Lithium Niobate[J]. Semiconductor Optoelectronics, 2017, 38(3): 342-344. DOI: 10.16818/j.issn1001-5868.2017.03.008 | |
| Authors: | CHEN Shuo LIU Zhanyuan NIU Xiaochen LI Xuepeng CHEN Kaixin |
| Abstract: | This paper focuses on lowering the half-wave voltage of lithium niobate (LN) electro-optic modulator. The principle of realizing the low half-wave voltage by the reflection structure is investigated. A reflection type electro-optic modulator is proposed and fabricated with x-cut LN crystal through the annealed proton-exchanged process. Preliminary results prove that the proposed reflection type LN electro-optic modulator can lower the half-wave voltage without increasing the length of device. |
| Keywords: | lithium niobate electro-optic modulators annealed proton-exchanged half-wave voltage/reflection structure |
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