| MgF_2·SrF_2掺杂PZN－BT陶瓷 |
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| 引用本文： | 方湘怡,姚熹.MgF_2·SrF_2掺杂PZN－BT陶瓷[J].电子元件与材料,1994(5). |
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| 作者姓名： | 方湘怡 姚熹 |
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| 作者单位： | 西安交通大学 |
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| 摘 要： | 适量掺入ＭｇＦ_２·ＳｒＦ_２有效地降低了０．８５ＰＺＮ（Ｐｂ（Ｚｎ_（１／３）Ｎｂ_（２／３））Ｏ_３）－０．１５ＢＴ（ＢａＴｉＯ_３）材料的烧结温度并得到了介电常数－温度特性接近于Ｘ７Ｒ特性标准的瓷料。在很宽的温度范围内出现了双介电常数峰。这种现象可从材料的纳米结构出发，用超顺电态的概念来描述。
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| 关 键 词： | 陶瓷介质，弛豫型铁电体，X7R特性 |
MgF_2·SrF_2-doped Pb (Zn_(1/3)Nb_(2/3)) O_3-BaTiO_3 Ceramics |
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| Fang Xiangyi,Yao Xi.MgF_2·SrF_2-doped Pb (Zn_(1/3)Nb_(2/3)) O_3-BaTiO_3 Ceramics[J].Electronic Components & Materials,1994(5). |
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| Authors: | Fang Xiangyi Yao Xi |
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| Affiliation: | Fang Xiangyi;Yao Xi |
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| Abstract: | Right addition of MgF_2 ·SrF_2 to 0. 85PZN-0.15BT effectively reduces it' s firing termerature and gains temperature dependence of it's dielectric constat as close as to one of the X7R ceramics. In wide temperature range the double-peak of dielectric constant appears. This phenominan is described in term of superpara-electric state from nanometer structure of the ceramics. |
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| Keywords: | dielectric ceramics relaxor ferroelectrics X7R characteristics |
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