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Galvanic displacement of BixTey thin films from sacrificial iron group thin films |
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| Authors: | Chong Hyun Chang Yong-Ho Choa Nosang V Myung |
| Affiliation: | a Department of Chemical and Environmental Engineering, University of California-Riverside, Riverside, CA 92521, USA b Department of Fine Chemical Engineering, Hanyang University, Ansan, 426-791, Republic of Korea c Department of Applied Materials Engineering, Hanbat National University, Daejeon, 305-719, Republic of Korea |
| Abstract: | BixTey thin films synthesized by galvanic displacement were systematically investigated by observing open circuit potential (OCP), surface morphology, microstructure and film composition. Surface morphologies and crystal structures of synthesized BixTey thin films were strongly depended on the type of the sacrificial materials (i.e., nickel (Ni), cobalt (Co) and iron (Fe)). Galvanically deposited BixTey thin films from the sacrificial Ni and Co thin films exhibited Bi2Te3 intermetallic compounds and hierarchical structures with backbones and sub-branches. A linear relationship of deposited Bi content in BixTey thin films as a function of Bi3+]/HTeO2+] ratio (within a range of less than 0.8) in the electrolyte was also observed. Surface morphologies of BixTey thin films were altered with the film composition. |
| Keywords: | Electrochemical process Galvanic displacement Bismuth telluride Thin films Thermoelectric materials Semiconducting materials |
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