| 一种改进了碰撞电离的超高速InP基SHBT SDD模型 |
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| 引用本文： | 葛霁,金智,刘新宇,程伟,王显泰,陈高鹏,吴德馨.一种改进了碰撞电离的超高速InP基SHBT SDD模型[J].半导体学报,2008,29(9):1799-1803. |
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| 作者姓名： | 葛霁 金智 刘新宇 程伟 王显泰 陈高鹏 吴德馨 |
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| 作者单位： | 中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029;中国科学院微电子研究所,北京,100029 |
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| 基金项目： | 国家重点基础研究规划项目 |
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| 摘 要： | 从物理机制上分析了超高速InP/InGaAs SHBT碰撞电离与温度的关系，通过加入表示温度的参数和简化电场计算，得到一种改进的碰撞电离模型. 同时针对自有工艺和器件特性，采用SDD (symbolically defined device）技术建立了一个包括碰撞电离和自热效应的InP/InGaAs SHBT的直流模型. 模型内嵌入HP-ADS中仿真并与测试结果进行比较，准确地拟合了InP/InGaAs SHBT的器件特性.
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| 关 键 词： | 碰撞电离 温度依赖 超高速InP基SHBT SDD模型 |
| 收稿时间： | 3/27/2008 3:40:09 PM |
| 修稿时间： | 4/21/2008 4:51:27 PM |
A SDD Model of Ultra High-Speed InP-Based SHBTs Including Improved Impact Ionization |
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| Ge Ji,Jin Zhi,Liu Xinyu,Cheng Wei,Wang Xiantai,Chen Gaopeng and Wu Dexin.A SDD Model of Ultra High-Speed InP-Based SHBTs Including Improved Impact Ionization[J].Chinese Journal of Semiconductors,2008,29(9):1799-1803. |
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| Authors: | Ge Ji Jin Zhi Liu Xinyu Cheng Wei Wang Xiantai Chen Gaopeng and Wu Dexin |
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| Affiliation: | Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China |
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| Abstract: | This paper investigates the relationship between the impact ionization and temperature in ultra high-speed InP-based SHBTs.Considering the effect of temperature,an improved equation of the multiplication factor for InP-based HBTs is derived at an approximation of the electric field.A new SDD model including impact ionization and self-heating effects is developed for ultra high-speed InP-based SHBTs.The simulation result is consistent with the experimental data,indicating the accurate predictions of the model. |
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| Keywords: | impact ionization temperature dependent ultra high-speed InP-based SHBTs SDD model |
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