Switching in m.i.s.m. and m.i.s.i.m. structures |
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| Authors: | Darwish M Board K |
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| Affiliation: | University College of Swansea, Department of Electrical Engineering, Swansea, UK; |
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| Abstract: | Switching has been observed in metal?thin-insulator?n-p+ structures, where the thin insulator is SiO2, or polycrystalline silicon. In this letter two alternative structures are discussed in which the n-p+ junction is replaced by a Schottky barrier. In the second device proposed two thin-insulator structures back-to-back are shown to exhibit bidirectional switching. |
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