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On negative differential resistance in hydrodynamic simulation of partially depleted SOI transistors
Authors:Polsky   B. Penzin   O. Sayed   K.E. Schenk   A. Wettstein   A. Fichtner   W.
Affiliation:Synopsys Inc., Mountain View, CA, USA;
Abstract:We show that the negative differential resistance in the I/sub d/-V/sub ds/ characteristics observed in hydrodynamic transport simulations of partially depleted silicon-on-insulator MOSFETs disappears if the nonlocality of tunneling effects are properly accounted for in the recombination-generation process.
Keywords:
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