On negative differential resistance in hydrodynamic simulation of partially depleted SOI transistors |
| |
Authors: | Polsky B. Penzin O. Sayed K.E. Schenk A. Wettstein A. Fichtner W. |
| |
Affiliation: | Synopsys Inc., Mountain View, CA, USA; |
| |
Abstract: | We show that the negative differential resistance in the I/sub d/-V/sub ds/ characteristics observed in hydrodynamic transport simulations of partially depleted silicon-on-insulator MOSFETs disappears if the nonlocality of tunneling effects are properly accounted for in the recombination-generation process. |
| |
Keywords: | |
|