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室温直流磁控溅射氮化钛薄膜研究
引用本文:黄佳木,徐成俊,张兴元,王亚平.室温直流磁控溅射氮化钛薄膜研究[J].真空科学与技术学报,2005,25(4):297-300.
作者姓名:黄佳木  徐成俊  张兴元  王亚平
作者单位:重庆大学材料学院,重庆,400045
摘    要:利用直流磁控溅射在室温下沉积出性能优良的氮化钛薄膜,研究了N2流量和偏压对氮化钛薄膜性能和结构的影响,并采用扫描隧道显微镜(STM)技术对其表面形貌进行了较为详细的研究.结果表明,随着N2流量的增加,薄膜的结构从四边型混合结构转变为面心立方 NaCl型结构,最后变为无定型结构,薄膜结构的变化也使薄膜的硬度随之发生变化;施加负偏压不仅能让薄膜中缺陷减少,使膜层变得更致密,而且还能优化氮化钛晶粒,从而获得性能优良的薄膜.从TiN薄膜的表面形貌图可知,薄膜表面平整,缺陷很少,晶粒排列非常致密,且空位及表面缺陷较少.

关 键 词:氮化钛  工艺参数  表面形貌  多晶态
文章编号:1672-7126(2005)04-0297-04
收稿时间:2004-12-03
修稿时间:2004年12月3日

Morphology and Physical Properties of Titanium Nitride Films Deposited by Magnetron Sputtering at Room Temperature
Huang Jiamu,Xu Chengjun,Zhang Xingyuan,Wang Yaping.Morphology and Physical Properties of Titanium Nitride Films Deposited by Magnetron Sputtering at Room Temperature[J].JOurnal of Vacuum Science and Technology,2005,25(4):297-300.
Authors:Huang Jiamu  Xu Chengjun  Zhang Xingyuan  Wang Yaping
Abstract:Titanium nitride films were grown by reactive magnetron sputtering at room temperature.Surface morphology and properties of the films were characterized with X-ray diffraction(XRD) and scanning tunneling microscopy(SEM).Influence of nitrogen flow rate and substrate bias voltage on the film growth was studied.The results show that as nitrogen flow rate increases,the dominant tetragonal crystal structure changes,via intermediate NaCl type of fcc,into amorphous phase,and its hardness varies accordingly.Moreover,an appropriate substrate bias reduces defect formation and improves its quality through optimizing the grain growth.and bettering its compactness.
Keywords:Titanium nitride  Technological parameters  Surface morphology  Polycrystalline structure
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