| 一种改进的忆阻器交叉阵列 |
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| 引用本文： | 杨立波,张小勇,梁伟泽.一种改进的忆阻器交叉阵列[J].测试科学与仪器,2017,8(3). |
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| 作者姓名： | 杨立波 张小勇 梁伟泽 |
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| 作者单位： | 1. 太原学院计算机工程系,山西太原,030032;2. 太原学院计算机工程系,山西太原030032;中北大学仪器与动态测试技术教育部重点实验室,山西太原030051 |
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| 基金项目： | Scientific and Technological Innovation Programs of Higher Education Institutions in Shanxi Province，Shanxi Key R&D Plan，Innovative Training Program for College Students in Shanxi Province，Natural Science Foundation of Shanxi Province |
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| 摘 要： | 本文对忆阻器的惠普模型与差分型忆阻器存储单元进行了分析与研究.利用惠普模型构成了经典的忆阻器交叉阵列,并对其存储性能进行了分析与仿真,提出了一种改进的基于差分型忆阻器单元的忆阻器交叉阵列.理论分析与仿真表明,改进的阵列在存储灰度图像时具有更好的效果,其峰值信噪比提高了约30％.
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| 关 键 词： | 忆阻器 交叉阵列 建模与仿真 图像存储 |
An improved crossbar array of memristor |
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| YANG Li-bo,ZHANG Xiao-yong,LIANG Wei-ze.An improved crossbar array of memristor[J].Journal of Measurement Science and Instrumentation,2017,8(3). |
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| Authors: | YANG Li-bo ZHANG Xiao-yong LIANG Wei-ze |
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| Abstract: | This paper conducts an analysis of HP model of a memristor and memory cells of a differential type memristor,forms a classic array of the memristor using the HP model,and does the stimulation of its storage capacity.Based on differential type memristor cells,this paper proposes an improved crossbar array of the memristor,which can be applied in image storage.By means of theoretical analysis and stimulation,this improved crossbar array of memristor has been proved to have better grayscale image storage capacity,and its peak signal-to-noise ratio (PSNR) has been improved by about 30％. |
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| Keywords: | memristor crossbar array modeling and simulation image storage |
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