Multilevel monolithic inductors in silicon technology |
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| Authors: | Soyuer M. Burghartz J.N. Jenkins K.A. Ponnapalli S. Ewen J.F. Pence W.E. |
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| Affiliation: | IBM Thomas J. Watson Res. Center, Yorktown Heights, NY; |
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| Abstract: | Multilevel monolithic inductors implemented in standard BiCMOS technology are presented. Use of top metal layers shunted with vias provides Q values approaching 10 at 2.4 GHz and above 6 at 900 MHz for a 2 nH inductor. There is no modification to the conventional wiring metallurgy and no need for extra processing steps |
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