| 具有漂移区场氧化层结构的射频LDMOS器件研究 |
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| 引用本文： | 冯曦,王纪民,刘道广.具有漂移区场氧化层结构的射频LDMOS器件研究[J].微电子学,2006,36(5):626-629. |
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| 作者姓名： | 冯曦 王纪民 刘道广 |
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| 作者单位： | 1. 清华大学,微电子研究所,北京,100084
2. 模拟集成电路国家重点实验室,中国电子科技集团公司,第二十四研究所,重庆,400060 |
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| 摘 要： | 介绍了一种改进型RF LDMOS器件。通过对传统RF LDMOS器件的工艺流程进行修改,并在漂移区上方引入场氧化层结构,改善了器件的准饱和现象。当工作在Vgs=5 V,Vds=10 V条件下时,与传统RF LDMOS器件相比,改进后RF LDMOS器件的跨导提高约81%,截止频率提高约89%,击穿电压提高约15%。
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| 关 键 词： | RFLDMOS 准饱和 漂移区 场氧化层 |
| 文章编号： | 1004-3365（2006）05-0626-04 |
| 收稿时间： | 2006-01-19 |
| 修稿时间： | 2006-01-192006-04-10 |
A Study on RF LDMOSFET with Field Oxide on Drift Region |
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| FENG Xi,WANG Ji-min,LIU Dao-guang.A Study on RF LDMOSFET with Field Oxide on Drift Region[J].Microelectronics,2006,36(5):626-629. |
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| Authors: | FENG Xi WANG Ji-min LIU Dao-guang |
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| Affiliation: | 1. Institute of Microelectronics , Tsinghua University, Beij ing , P. R. China 1000843 2. National Laboratory of Analog Integrated Circuits ; Sichuan Institute of Solid-State Circuits, CETC, Chongqing , 400060, P. R. China |
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| Abstract: | A novel RF LDMOS is presented. By modifying process for conventional RF LDMOS and introducing field oxide on the drift region,quasi-saturation effect of the device is reduced and performance of the device is greatly improved.Specifically,the transconductance,cut-off frequency and breakdown voltage of the modified RF LDMOS device increase by 81%,89% and 15%,respectively,at V_(gs)=5 V and V_(ds)=10 V. |
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| Keywords: | RF LDMOS Quasi-saturation Drift region Field oxide |
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