| Ferroelectric properties of dysprosium-doped Bi4Ti3O12 thin films crystallized in various atmospheres |
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| 作者姓名： | 成传品 唐明华 叶志 周益春 郑学军 钟向丽 胡增顺 |
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| 作者单位： | Key Laboratory of Advanced Materials and Rheological Properties of Ministry of Education, Faculty of Materials and Optoelectronic Physics, Xiangtan University, Xiangtan 411105, China |
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| 基金项目： | Project （05FJ2005） supported by the Key Project of Scientific and Technological Department of Hunan Province, China; Project （05C095） supported by the Research Funds of Educational Department of Hunan Province, China |
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| 摘 要： | Dysprosium-doped Bi4Ti3O12 （Bi3.4Dy0.6Ti3O12, BDT） ferroelectric thin films were deposited on Pt（111）/Ti/SiO2/Si（111） substrates by chemical solution deposition （CSD） and crystallized in nitrogen, air and oxygen atmospheres, respectively. X-ray diffraction （XRD） and scanning electron microscopy （SEM） were used to identify the crystal structure, the surface and cross-section morphology of the deposited ferroelectric films. The results show that the crystallization atmosphere has significant effect on determining the crystallization and ferroelectric properties of the BDT films. The film crystallized in nitrogen at a relatively low temperature of 650 ℃, exhibits excellent crystallinity and ferroelectricity with a remanent polarization of 2Pr = 24.9 ℃/cm^2 and a coercive field of 144.5 kV/cm. While the films annealed in air and oxygen at 650 ℃ do not show good crystallinity and ferroelectricity until they are annealed at 700 ℃. The structure evolution and ferroelectric properties of BDT thin films annealed under different temperatures （600-750 ℃） were also investigated. The crystallinity of the BDT films is improved and the average grain size increases when the annealing temperature increases from 600 ℃ to 750 ℃ at an interval of 50 ℃. However, the polarization of the films is not monotonous function of the annealing temperature.
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| 关 键 词： | BDT薄膜 结晶气氛 铁电性质 镝掺杂 Bi4Ti3O12 |
| 收稿时间： | 2006-04-10 |
| 修稿时间： | 2006-04-25 |
Ferroelectric properties of dysprosium-doped Bi4Ti3O12 thin films crystallized in various atmospheres |
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| CHENG Chuan-pin, TANG Ming-hua, YE Zhi, ZHOU Yi-chun ZHENG Xue-jun, ZHONG Xiang-li, HU Zeng-shun.Ferroelectric properties of dysprosium-doped Bi4Ti3O12 thin films crystallized in various atmospheres[J].Transactions of Nonferrous Metals Society of China,2006,16(B01):33-36. |
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| Authors: | CHENG Chuan-pin TANG Ming-hua YE Zhi ZHOU Yi-chun ZHENG Xue-jun ZHONG Xiang-li HU Zeng-shun |
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| Affiliation: | 1. Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Hubei University, Wuhan, Hubei 430062, PR China;2. Faculty of Physics and Electronic Technology, Hubei University, Wuhan, Hubei 430062, PR China;3. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei 430074, PR China;1. Multifunctional Material Research Laboratory, ITER, Siksha ‘O’ Anusandhan University, Bhubaneswar-751030, India;2. R&D, GIET, Gunupur, Odisha, India;1. School of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, Republic of Korea;2. Department of Materials Science and Engineering, Iowa State University, Ames, IA, 50011, USA;3. School of Materials Science and Engineering, University of New South Wales, New South Wales, 2052, Australia |
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| Abstract: | Dysprosium-doped Bi4Ti3O12 (Bi3.4Dy0.6Ti3O12 BDT) ferroelectric thin films were deposited on Pt(111)/Ti/SiO2/Si(111) substrates by chemical solution deposition (CSD) and crystallized in nitrogen, air and oxygen atmospheres, respectively. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to identify the crystal structure, the surface and cross-section morphology of the deposited ferroelectric films. The results show that the crystallization atmosphere has significant effect on determining the crystallization and ferroelectric properties of the BDT films. The film crystallized in nitrogen at a relatively low temperature of 650 °C, exhibits excellent crystallinity and ferroelctricity with a remanent polarization of 2Pr = 24.9 μC/cm2 and a coercive field of 144.5 kV/cm. While the films annealed in air and oxygen at 650 °C do not show good crystallinity and ferroelectricity until they are annealed at 700 °C. The structure evolution and ferroelectric properties of BDT thin films annealed under different temperatures (600–750 °C) were also investigated. The crystallinity of the BDT films is improved and the average grain size increases when the annealing temperature increases from 600 °C to 750 °C at an interval of 50 °C. However, the polarization of the filas is not monotonous function of the annealing temperature. |
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| Keywords: | BDT thin films CSD crystallization atmosphere |
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