Modelling the centroid and charge density in double-gate MOSFETs including quantum effects

An analytical model for double-gate metal–oxide–semiconductor field-effect transistors considering quantum effects is presented in this article. The variational method is used to solve the Schrodinger–Poisson's equation. The simple and accurate mathematical expressions for centroid and inversion charge density are obtained. It is seen that the minimum energy of the sub-bands and the inversion charge density decreases as the silicon thickness of the device increases. The analytical results obtained from the proposed model are compared and agreed well with a device simulation tool named SCHRED.