Effects of base doping and carrier lifetime on differential current gain and temperature coefficient of 4H-SiC power bipolar junction transistors |
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Authors: | X Niu |
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Affiliation: | Department of Electrical Engineering , University of Colorado Denver , CO , USA |
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Abstract: | Considering the circumstance of heterogeneous voice flows, first, by applying Markov chain, this paper proposes an unsaturated analytical model for the IEEE 802.11e EDCA protocol, which considers the condition of non-ideal transmission channel and the character of the occurrence of backoff countdown at the beginning of time slot in EDCA protocol. Furthermore, according to the proposed model, the media access delay and throughput of a flow are analysed, and the flow-oriented call admission control (CAC) scheme is proposed. Finally, the simulation results are shown to confirm that the proposed CAC scheme can guarantee the requirements of throughput and delay of voice flows, and can admit more voice flows to improve the utilisation efficiency of network resources by choosing the appropriate values of the minimum contention window or the appropriate varieties of voice flows. |
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Keywords: | bipolar junction transistor silicon carbide gain simulation modelling |
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