| 微晶硅薄膜太阳电池中孵化层研究 |
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| 引用本文： | 张晓丹,赵颖,高艳涛,朱锋,魏长春,孙建,耿新华,熊绍珍.微晶硅薄膜太阳电池中孵化层研究[J].半导体学报,2006,27(6):1030-1033. |
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| 作者姓名： | 张晓丹 赵颖 高艳涛 朱锋 魏长春 孙建 耿新华 熊绍珍 |
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| 作者单位： | 南开大学光电子薄膜器件与技术研究所，南开大学光电子薄膜器件与技术天津市重点实验室，光电信息技术科学教育部重点实验室（南开大学，天津大学），天津 300071;南开大学光电子薄膜器件与技术研究所，南开大学光电子薄膜器件与技术天津市重点实验室，光电信息技术科学教育部重点实验室（南开大学，天津大学），天津 300071;南开大学光电子薄膜器件与技术研究所，南开大学光电子薄膜器件与技术天津市重点实验室，光电信息技术科学教育部重点实验室（南开大学，天津大学），天津 300071;南开大学光电子薄膜器件与技术研究所，南开大学光电子薄膜器件与技术天津市重点实验室，光电信息技术科学教育部重点实验室（南开大学，天津大学），天津 300071;南开大学光电子薄膜器件与技术研究所，南开大学光电子薄膜器件与技术天津市重点实验室，光电信息技术科学教育部重点实验室（南开大学，天津大学），天津 300071;南开大学光电子薄膜器件与技术研究所，南开大学光电子薄膜器件与技术天津市重点实验室，光电信息技术科学教育部重点实验室（南开大学，天津大学），天津 300071;南开大学光电子薄膜器件与技术研究所，南开大学光电子薄膜器件与技术天津市重点实验室，光电信息技术科学教育部重点实验室（南开大学，天津大学），天津 300071;南开大学光电子薄膜器件与技术研究所，南开大学光电子薄膜器件与技术天津市重点实验室，光电信息技术科学教育部重点实验室（南开大学，天津大学），天津 300071 |
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| 基金项目： | 国家研究发展基金
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天津市科技攻关项目
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中国科学院资助项目 |
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| 摘 要： | 对甚高频等离子体增强化学气相沉积技术制备的微晶硅薄膜太阳电池进行了研究.喇曼测试结果显示:微晶硅薄膜太阳电池在p/i界面存在着一定的非晶孵化层.孵化层的厚度随硅烷浓度的增加或辉光功率的降低而增大.可以通过适当的硅烷浓度或适当的辉光功率来降低孵化层的厚度.
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| 关 键 词： | 微晶硅薄膜太阳电池 孵化层 喇曼光谱 微晶硅薄膜太阳电池 孵化 研究 Solar Cells Microcrystalline Silicon Layers Incubation 辉光功率 硅烷浓度 厚度 非晶 存在 界面 显示 测试结果 喇曼 气相沉积技术 化学 增强 甚高频等离子体 |
| 文章编号： | 0253-4177(2006)06-1030-04 |
| 收稿时间： | 10 8 2005 12:00AM |
| 修稿时间： | 11 16 2005 12:00AM |
Study of Incubation Layers in Microcrystalline Silicon Solar Cells |
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| Zhang Xiaodan,Zhao Ying,Gao Yantao,Zhu Feng,Wei Changchun,Sun Jian,Geng Xinhua and Xiong Shaozhen.Study of Incubation Layers in Microcrystalline Silicon Solar Cells[J].Chinese Journal of Semiconductors,2006,27(6):1030-1033. |
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| Authors: | Zhang Xiaodan Zhao Ying Gao Yantao Zhu Feng Wei Changchun Sun Jian Geng Xinhua and Xiong Shaozhen |
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| Affiliation: | Key Laboratory of the Ministry of Education of Opto-Electronic Information Science and Technology(Nankai University,Tianjin University),Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China;Key Laboratory of the Ministry of Education of Opto-Electronic Information Science and Technology(Nankai University,Tianjin University),Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China;Key Laboratory of the Ministry of Education of Opto-Electronic Information Science and Technology(Nankai University,Tianjin University),Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China;Key Laboratory of the Ministry of Education of Opto-Electronic Information Science and Technology(Nankai University,Tianjin University),Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China;Key Laboratory of the Ministry of Education of Opto-Electronic Information Science and Technology(Nankai University,Tianjin University),Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China;Key Laboratory of the Ministry of Education of Opto-Electronic Information Science and Technology(Nankai University,Tianjin University),Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China;Key Laboratory of the Ministry of Education of Opto-Electronic Information Science and Technology(Nankai University,Tianjin University),Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China;Key Laboratory of the Ministry of Education of Opto-Electronic Information Science and Technology(Nankai University,Tianjin University),Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin,Institute of Photo-Electronics Thin Film Devices and Technique,Nankai University,Tianjin 300071,China |
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| Abstract: | The structure of microcrystalline silicon thin film solar cells prepared by very high frequency plasma enhanced chemical vapor deposition,is studied.Raman measurements indicate that there is an amorphous incubation layer at the p/i interface in the solar cells.The thickness of the incubation layer increases with increasing silane concentration and decreasing discharge power.A suitable silane concentration and discharge power can be used to reduce the thickness of the incubation layer. |
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| Keywords: | microcrystalline silicon thin film solar cells incubation layer Raman scattering spectra |
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