高密度等离子体刻蚀机中的终点检测技术

高密度等离子体刻蚀是当今超大规模集成电路制造过程中的关键步骤.目前已经开发出许多终点检测技术.文章讨论了终点检测技术的原理,综述了目前主流刻蚀机使用的两种终点检测技术-OES和IEP-的最新进展,讨论了终点检测技术在深亚微米等离子体刻蚀工艺中的应用,以及所面临的挑战.

Endpoint Detection in High Density Plasma Etching System

High density plasma etching is a crucial step in the fabrication of ultra large-scale integrated circuits. Many techniques have been explored for endpoint detection. In this article, the principle of endpoint detections is dealt with, and the latest development of endpoint detection techniques, such as optical emission spectroscopy (OES) and interferometry end point (IEP), is reviewed. Application of these techniques in poly-silicon gate etching process, especially in deep sub-micrometer manufacturing process, is discussed, along with their technical limitations.