Charge storage in InAlAs/InGaAs/InP floating gate heterostructures |
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| Authors: | Lott J.A. Klem J.F. Weaver H.T. Tigges C.P. Radoslovich-Cibicki V. |
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| Affiliation: | Sandia Nat. Lab., Albuquerque, NM, USA; |
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| Abstract: | ![]()
Charge retention in floating gate InAlAs/InGaAs/InP field effect transistors is limited by lateral electron motion along the storage channel, a different direction for motion than found for AlAs/GaAs devices. Storage times as a function of temperature for the InP based alloy devices are reported and compared with similar AlAs/GaAs devices by using Poisson equation models.<> |
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