Inductively coupled plasma etching of Pb(ZrxTi1-x)O3 thin films in Cl2/C2F6/Ar and HBr/Ar plasmas

Pb(Zr_xTi_1-x)O₃ thin films were etched in an inductively coupled plasma by using various etch gases such as Cl₂/Ar, C₂F₆/Ar, Cl₂/C₂F₆/Ar and HBr/Ar. The etch rates and etch profiles for each etch gas were investigated. Fast etch rates were obtained in chlorine-containing etch gases (e.g., Cl₂/Ar and Cl₂/C₂F₆/Ar), and clean and steep etch profiles were achieved in Cl₂/Cv₂F₆/Ar or HBr/Ar gases. The gas mixture of Cl₂ and C₂F₆ was proposed to give a fast etch rate and a steep sidewall angle of etched patterns. The optimum gas mixture of Cl₂C₂F₆/Ar was found by varying the gas ratio of Cl₂ to C₂F₆. On the other hand, HBr/Ar gas as an alternative for etching of the Pb(Zr_xTi_1-x)O₃ films was examined. Cl₂/C₂F₆/Ar and HBr/Ar etch gases were compared with respect to etch rate, etch profile and electrical properties.