周期性前驱体的预硫化处理对Cu2ZnSnS4薄膜的影响EI北大核心CSCD

Cu2ZnSnS4薄膜具有组成元素来源丰富、吸收系数高等优点,是理想的薄膜太阳能电池吸收层材料。采用磁控溅射法沉积周期性金属叠层前驱体,再进行两步硫化处理制备出Cu2ZnSnS4薄膜,分析第一步硫化(即预硫化)对Cu2ZnSnS4薄膜特性的影响。结果表明,预硫化处理可促进前驱体的硫化反应。经过预硫化处理的Cu2ZnSnS4薄膜的结晶度优于未进行预硫化处理的Cu2ZnSnS4薄膜。当预硫化温度为350℃时,增加预硫化时间有利于硫化反应的进行,并抑制Sn元素损失,但过长的预硫化时间导致Cu2ZnSnS4薄膜中易出现二次相,影响薄膜的特性。预硫化温度350℃、预硫化时间10 min的Cu2ZnSnS4薄膜结晶度最优,薄膜组分具有贫Cu、富Zn特性,且薄膜表面无孔隙。

Effect of pre-sulfurization treatment of periodic precursor on Cu2ZnSnS4 thin film

The Cu2ZnSnS4 thin film has advantages of naturally abundant elements and high absorption coefficient, which make it an ideal absorber material for thin film solar cell. The periodic metal precursors of Cu2ZnSnS4 were deposited by magnetron sputtering. Then, the Cu2ZnSnS4 thin films were fabricated by two-step sulfurization treatment of the periodic precursors. The effects of the first step sulfurization(pre-sulfurization) on the properties of Cu2ZnSnS4 thin films were studied. The results indicate that the pre-sulfurization treatment can promote the sulfurization reactions of periodic precursors. The crystallinities of Cu2ZnSnS4 thin films with pre-sulfurization are superior to that of Cu2ZnSnS4 thin film without pre-sulfurization. When the pre-sulfurization temperature is 350 ℃, the increase of pre-sulfurization time is beneficial to the sulfurization reactions of precursors and inhibition of Sn-loss. However, an overlong pre-sulfurization time leads to easy formations of secondary phases in the final thin films, which affect the properties of Cu2ZnSnS4 thin films. The pre-sulfurization temperature of 350 ℃ and pre-sulfurization time of 10 min can get the best crystallinity of Cu2ZnSnS4 thin film with Cu-poor and Zn-rich composition and void-free surface.