射频辅助磁控溅射制备梯度Cr/CrC膜的性能

目的 改善CrC薄膜的制备工艺，提高薄膜的结合强度。方法 采用射频偏压辅助磁控溅射技术，以Cr和石墨为靶材，C2H2为反应气体，在M42高速钢表面制备梯度Cr/CrC膜。利用扫描电子显微镜（SEM）、能谱仪（EDS）、Raman光谱仪分析薄膜的微观形貌、成分组成、键结构，用纳米压痕仪、洛氏硬度计对薄膜的结合性能进行评价。结果 成功制备了表面致密均匀的梯度Cr/CrC薄膜，薄膜中sp3键含量随石墨靶射频功率的增加而呈现先增大后减小的趋势。薄膜的结合强度随射频功率的增大而先增大后减小，射频功率为250 W时，薄膜中含有最多的sp3键，并且有最高的硬度，硬度值为21 GPa。结论 纯Cr过渡层能有效吸收薄膜中的内应力，改善膜/基结合性能，对Cr/CrC薄膜结合强度有明显增强作用。石墨靶的射频功率大小对梯度Cr/CrC膜的结构和结合强度有显著影响，射频功率为250 W时，制备出的薄膜具有最高的硬度和结合强度。

Performance of Gradient Cr-DLC Film Prepared by RF Enhanced Magnetron Sputtering

The work aims to increase the bonding strength of the CrC thin films by improving the preparation process of the films. Gradient Cr/CrC films were deposited on M42 high-speed steel by RF enhanced magnetron sputtering with Cr and graphite as targets and C2H2 as reaction gas. Microstructure, composition and bond structure of thin film were analyzed by SEM, EDS and Raman spectroscopy. Adhesion strength was evaluated by nano-indender and Rockwell-C hardness tester. A dense and uniform gradient Cr/CrC film was deposited through the experiment. The bonding strength and the sp3 content in the films increased first, and then decreased with the increase of RF power of graphite target. When the RF power was 250 W, the film had the highest sp3 content and the maximum hardness of 21 GPa. The pure Cr transition layer can effectively absorb the internal stress in the film, improve the film/substrate bonding performance, and significantly enhance the bonding strength of the Cr/CrC film. The RF power of graphite target has a significant effect on the structure and bonding strength of gradient Cr/CrC film. The film has the highest hardness and bonding strength when the RF power is 250 W.