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Growth and optical properties of strained (AIP)n (GaP)n short-period superlattices |
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| Authors: | K Shiraishi J Kitamura K Hara H Munekata H Kukimoto |
| Affiliation: | (1) Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, 226 Yokohama, Japan;(2) Present address: Toppan Printing Co., Ltd., 1-5-1 Taito, Taito-ku, 110 Tokyo, Japan |
| Abstract: | Biaxial tensile strain is introduced into (AlP)n(GaP)n superlattices (SLs) by growing the SLs on slightly lattice-mismatched InGaP intermediate layers on GaP(00l) substrates. A significant enhancement of photoluminescence intensity is observed for the strained (AlP)n (GaP)n short-period SLs, especially for those with n≤ 3. |
| Keywords: | (AlP)n(GaP)n metalorganic vapor phase epitaxy (MOVPE) photoluminescence (PL) short-period superlattice strained layers |
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