Crystal quality of a 6H-SiC layer grown over macrodefects by liquid-phase epitaxy: a Raman spectroscopic study |
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Authors: | Toru Ujihara Shinji Munetoh Kazuhito Kamei Kozo Fujiwara Kazuo Nakajima |
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Affiliation: | a Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aobaku, Sendai 980-8577, Japan b Corporate Research and Development Laboratories, Sumitomo Metal Industries Ltd., 1-8 Fuso-cho, Amagasaki, Hyogo, 660-0891, Japan |
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Abstract: | Liquid-phase epitaxial (LPE) growth on silicon carbide simultaneously covers macroscale defects, e.g. micropipes, and improves the quality of the crystal. In this study, an epi-layer grown over a macrodefect was evaluated by micro-Raman scattering spectroscopy. Before the growth process, the density of the stacking fault was high and the carrier density spatially inhomogeneous in the vicinity of the macrodefects. On the other hand, after growth, the layer over the macrodefect displayed good quality; the density of the stacking fault was less than that before growth and the homogeneity of the carrier density improved. |
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Keywords: | 435 Silicon carbide 260 Liquid-phase epitaxy 403 Raman scattering 446 Stress |
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