| In_2O_3掺杂Bi_(0.5)(Na_(0.82)K_(0.18))_(0.5)TiO_3无铅压电陶瓷的研究 |
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| 引用本文： | 尹丹,周昌荣,刘心宇,成钧.In_2O_3掺杂Bi_(0.5)(Na_(0.82)K_(0.18))_(0.5)TiO_3无铅压电陶瓷的研究[J].电子元件与材料,2010,29(5). |
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| 作者姓名： | 尹丹 周昌荣 刘心宇 成钧 |
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| 作者单位： | 桂林电子科技大学,材料科学与工程学院,广西,桂林,541004;桂林电子科技大学,广西信息材料重点实验室,广西,桂林,541004 |
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| 基金项目： | 广西信息材料重点实验室主任基金资助项目 |
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| 摘 要： | 以准同型相界组成Bi0.5(Na0.82K0.18)0.5TiO3(BNT)为基础配方,In2O3为改性剂,研究了In2O3掺杂量对Bi0.5(Na0.82K0.18)0.5TiO3无铅陶瓷晶体结构和电性能的影响。XRD分析表明,所有样品的相结构均为纯钙钛矿固溶体。陶瓷的晶粒尺寸随掺杂量的增加而增加。介电常数-温度曲线显示陶瓷具有两个介电反常峰tf和tm,在tm的介电常数εm随掺杂量的增加而下降,tf和tm都随掺杂量的增加向高温移动。当In2O3摩尔分数为0.1%时,压电性能达最大值:d33=141pC/N,kp=0.32。
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| 关 键 词： | 无铅压电陶瓷 BNT In2O3掺杂 介电性能 钙钛矿结构 |
Study of In2O3 doped Bi0.5(Na0.82K0.18)0.5TiO3 lead-free piezoelectric ceramics |
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| YIN Dan,ZHOU Changrong,LIU Xinyu,CHENG Jun.Study of In2O3 doped Bi0.5(Na0.82K0.18)0.5TiO3 lead-free piezoelectric ceramics[J].Electronic Components & Materials,2010,29(5). |
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| Authors: | YIN Dan ZHOU Changrong LIU Xinyu CHENG Jun |
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| Abstract: | The composition of Bi0.5(Na0.82K0.18)0.5TiO3(BNT) near the MPB was selected as base component and In2O3 was selected as a dopant.The effect of In2O3 doping amount on the crystal structure and electrical properties of lead-free piezoelectric ceramics Bi0.5(Na0.82K0.18)0.5TiO3 was investigated.X-ray diffraction analysis shows that all samples possess single perovskite structure.The grain size increases evidently with amount of In2O3.There are two dielectric abnormal peaks(tf and tm) on εr-t curves,and both dielectric abnormal peaks shifts to high temperature and εm(εr at tm) decreases with content of In2O3.The maximum value of d33=141 pC/N and kp=0.32 are obtained at 0.1%(mole fraction) In2O3 addition. |
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| Keywords: | BNT |
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