| 圆形台面中的AlAs/AlGaAs湿法氧化动力学规律 |
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| 引用本文： | 董立闽,郭霞,渠红伟,邓军,杜金玉,邹德恕,沈光地.圆形台面中的AlAs/AlGaAs湿法氧化动力学规律[J].半导体学报,2005,26(13):281-284. |
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| 作者姓名： | 董立闽 郭霞 渠红伟 邓军 杜金玉 邹德恕 沈光地 |
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| 作者单位： | 北京工业大学电子信息与控制工程学院，北京市光电子技术实验室,北京 100022;北京工业大学电子信息与控制工程学院，北京市光电子技术实验室,北京 100022;北京工业大学电子信息与控制工程学院，北京市光电子技术实验室,北京 100022;北京工业大学电子信息与控制工程学院，北京市光电子技术实验室,北京 100022;北京工业大学电子信息与控制工程学院，北京市光电子技术实验室,北京 100022;北京工业大学电子信息与控制工程学院，北京市光电子技术实验室,北京 100022;北京工业大学电子信息与控制工程学院，北京市光电子技术实验室,北京 100022 |
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| 摘 要： | AlAs/AlGaAs湿法氧化技术是制备氧化物限制型VCSELs工艺中极为重要的一步,形成的氧化孔会直接影响到器件的各个特性参数，故有必要对氧化动力学规律进行深入地研究. 首先根据大量氧化实验得到了一般氧化规律曲线，再通过结合一维Deal-Grove氧化动力学模型，对比一维条形、二维圆形凸、凹台面的氧化规律，推导出了简单实用的二维圆形台面的氧化模型，所得模型曲线与实验数据均吻合较好，并成功地运用此模型实现了对氧化孔大小的精确控制.
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| 关 键 词： | VCSEL AlGaAs 湿法氧化 |
Kinetics of Growth of AlAs/AlGaAs Oxide in Cylindrical Mesa |
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| Dong Limin,Guo Xi,Qu Hongwei,Deng Jun,Du Jinyu,Zou Deshu and Shen Guangdi.Kinetics of Growth of AlAs/AlGaAs Oxide in Cylindrical Mesa[J].Chinese Journal of Semiconductors,2005,26(13):281-284. |
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| Authors: | Dong Limin Guo Xi Qu Hongwei Deng Jun Du Jinyu Zou Deshu and Shen Guangdi |
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| Affiliation: | Institute of Electronic Information and Engineering,Beijing University of Technology & BeijingOptoelectronic Technology Laboratory,Beijing 100022, China;Institute of Electronic Information and Engineering,Beijing University of Technology & BeijingOptoelectronic Technology Laboratory,Beijing 100022, China;Institute of Electronic Information and Engineering,Beijing University of Technology & BeijingOptoelectronic Technology Laboratory,Beijing 100022, China;Institute of Electronic Information and Engineering,Beijing University of Technology & BeijingOptoelectronic Technology Laboratory,Beijing 100022, China;Institute of Electronic Information and Engineering,Beijing University of Technology & BeijingOptoelectronic Technology Laboratory,Beijing 100022, China;Institute of Electronic Information and Engineering,Beijing University of Technology & BeijingOptoelectronic Technology Laboratory,Beijing 100022, China;Institute of Electronic Information and Engineering,Beijing University of Technology & BeijingOptoelectronic Technology Laboratory,Beijing 100022, China |
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| Abstract: | Wet oxidation of AlAs/AlGaAs is an important step in the process of the oxide-confined VCSELs.The kinetics of Al0.98Ga0.02As wet oxidation process are investigated in cylindrically symmetric mesa structure.We compare and analyze the rule relation between the stripe,convex,and concave mesa,and obtain a novel model which suits 2D cylindrical structure.The simulated data using the novel formulation is in close agreement with the experiment data. |
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| Keywords: | VCSEL AlGaAs wet oxidation |
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