| 硅通孔技术的发展与挑战 |
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| 引用本文： | 刘培生,黄金鑫,仝良玉,沈海军,施建根.硅通孔技术的发展与挑战[J].电子元件与材料,2012,31(12):76-80. |
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| 作者姓名： | 刘培生 黄金鑫 仝良玉 沈海军 施建根 |
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| 作者单位： | 1. 南通大学江苏省专用集成电路设计重点实验室,江苏南通226019;南通富士通微电子股份有限公司,江苏南通226006
2. 南通富士通微电子股份有限公司,江苏南通,226006 |
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| 基金项目： | 江苏省高校自然科学重大基础研究资助项目(No.10KJA40043);南通大学自然科学研究资助项目(No.09Z051,No.09R23,No.2010K121);国家科技重大专项“02专项”资助项目(No.2009ZX02024-003);南通大学研究生科技创新计划资助项目(No.YKC12072);江苏省研究生科技创新计划资助项目(No.CXZZ12_0864) |
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| 摘 要： | 3D堆叠技术近年来发展迅速,采用硅通孔技术(TSV)是3D堆叠封装的主要趋势.介绍了3D堆叠集成电路、硅通孔互连技术的研究现状、TSV模型；同时阐述了TSV的关键技术与材料,比如工艺流程、通孔制作、通孔填充材料、键合技术等；最后分析了其可靠性以及面临的挑战.TSV技术已经成为微电子领域的热点,也是未来发展的必然趋势,运用它将会使电子产品获得高性能、低成本、低功耗和多功能性.
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| 关 键 词： | 硅通孔 三维封装 综述 高性能 |
Development and challenges of through-silicon via technology |
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| LIU Peisheng,HUANG Jinxin,TONG Liangyu,SHEN Haijun,SHI Jiangen.Development and challenges of through-silicon via technology[J].Electronic Components & Materials,2012,31(12):76-80. |
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| Authors: | LIU Peisheng HUANG Jinxin TONG Liangyu SHEN Haijun SHI Jiangen |
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| Affiliation: | 1.Jiangsu Key Laboratory of ASIC Design,Nantong University,Nantong 226019,Jiangsu Province,China;2.Nantong Fujistu Microelectronics Co.,Ltd,Nantong 226006,Jiangsu Province,China) |
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| Abstract: | With the fast development in recent years,through-silicon-via(TSV) technology is the main trend of three-dimensional stacked packaging.The three-dimensional stacked integrated circuits,the research status of TSV,TSV model are reviewed and introduced;key technologies and materials of TSV,such as process flow,TSV fabrication,filling materials and bonding technology are described as well.At last,the reliability and its challenges are expounded.TSV becomes a hot research and the inevitable trend of microelectronics field.Better performance,lower cost,lower power consumption and more functionality of future electronic products become feasible with TSV concept application. |
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| Keywords: | through-silicon-via three dimensional packaging review high performance |
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