Microwave power amplifiers based on AlGaN/GaN transistors with a two-dimensional electron gas |
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Authors: | O G Vendik I B Vendik P A Tural’chuk Ya M Parnes M D Parnes |
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Affiliation: | 1.St. Petersburg State Electrotechnical University “LETI,”,St. Petersburg,Russia;2.Rezonans Company,St. Petersburg,Russia |
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Abstract: | A technique for synthesis of microwave power amplifiers based on transistors with a AlGaN/GaN heterojunction is discussed. Special focus is on the development of a technique for synthesis of transformation circuits of the power amplifier to increase efficiency with a retained high output power. The use of independent matching at the harmonic frequencies and fundamental frequency makes it possible to control the attainable efficiency in a wide frequency band along with the total suppression of harmonics beyond the operational band. Microwave power amplifiers for operation at 4 and 9 GHz have been developed and experimentally investigated. |
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