| f=210GHz的超高速InP/InGaAs单异质结晶体管 |
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| 引用本文： | 程伟,金智,刘新宇,于进勇,徐安怀,齐鸣.f=210GHz的超高速InP/InGaAs单异质结晶体管[J].半导体学报,2008,29(3). |
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| 作者姓名： | 程伟 金智 刘新宇 于进勇 徐安怀 齐鸣 |
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| 作者单位： | 1. 中国科学院微电子研究所,北京,100029
2. 中国科学院上海微系统与信息技术研究所,上海,200050 |
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| 摘 要： | 成功地将Polyimide钝化平坦化工艺应用于InP/InGaAs单异质结晶体管制作工艺中.在Vce=1.1V,Ic=33.5mA的偏置条件下,发射极尺寸为1.4μm×1.5μm的器件,其ft达到210GHz.这种器件非常适合高速低功耗方面的应用,例如超高速数模混合电路以及光学通信系统等.
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| 关 键 词： | InP 异质结晶体管 聚酰亚胺 平坦化 |
Ultra High-Speed InP/InGaAs SHBTs with ft of 210GHz |
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| Cheng Wei,Jin Zhi,Liu Xinyu,Yu Jinyong,Xu Anhuai,Qi Ming.Ultra High-Speed InP/InGaAs SHBTs with ft of 210GHz[J].Chinese Journal of Semiconductors,2008,29(3). |
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| Authors: | Cheng Wei Jin Zhi Liu Xinyu Yu Jinyong Xu Anhuai Qi Ming |
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| Abstract: | Polyimide passivation and planarization process techniques for high speed InP/InGaAs single heterojunction bi- polar transistors (SHBTS) are developed. A maximum extrapolated ft of 210GHz is achieved for the SHBT with 1.4μm×1.5μm emitter area at VCE=1.1V and IC=33.5mA. This device is suitable for high speed and low power applications,such as ultra high speed mixed signal circuits and optoelectronic communication Ics. |
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| Keywords: | InP HBT polyimide planarization |
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