| 钒掺杂形成半绝缘6H-SiC的补偿机理 |
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| 引用本文： | 王超,张义门,张玉明,王悦湖,徐大庆.钒掺杂形成半绝缘6H-SiC的补偿机理[J].半导体学报,2008,29(2):206-209. |
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| 作者姓名： | 王超 张义门 张玉明 王悦湖 徐大庆 |
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| 作者单位： | 西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安,710071;西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安,710071;西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安,710071;西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安,710071;西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安,710071 |
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| 基金项目： | 国家自然科学基金，Key Research Foundation of the Ministry of Education，Xi'an Applied Materials Foundation |
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| 摘 要： | 研究了钒掺杂生长半绝缘6H-SiC的补偿机理.二次离子质谱分析结果表明,非故意掺杂生长的6H-SiC中,氮是主要的剩余浅施主杂质.通过较深的钒受主能级对氮施主的补偿作用,得到了具有半绝缘特性的SiC材料.借助电子顺磁共振和吸收光谱分析,发现SiC中同时存在中性钒(V4+)和受主态钒(V3+)的电荷态,表明掺入的部分杂质钒通过补偿浅施主杂质氮,形成受主态钒,这与二次离子质谱分析结果相吻合.通过对样品进行吸收光谱和低温光致发光测量,发现钒受主能级在6H-SiC中位于导带下0.62eV处.
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| 关 键 词： | 6H-SiC 半绝缘 钒掺杂 补偿 钒受主能级 |
A Compensation Mechanism for Semi-Insulating 6H-SiC Doped with Vanadium |
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| Wang Chao,Zhang Yimen,Zhang Yuming,Wang Yuehu,Xu Daqing.A Compensation Mechanism for Semi-Insulating 6H-SiC Doped with Vanadium[J].Chinese Journal of Semiconductors,2008,29(2):206-209. |
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| Authors: | Wang Chao Zhang Yimen Zhang Yuming Wang Yuehu Xu Daqing |
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| Abstract: | A model is presented to describe a compensation mechanism for semi-insulating 6H-SiC grown with the inten-tional doping of vanadium. Because we found nitrogen to be the principal shallow donor impurity in SiC by secondary ionmass spectroscopy (SIMS) measurements,semi-insulating properties in SiC are achieved by compensating the nitrogen donor with the vanadium deep aceeptor level. The presence of different vanadium charge states V3+ and V4+ is detected by electron paramagnetie resonance and optical absorption measurements,which coincides with the results obtained by SIMS measurements. Both optical absorption and low temperature photoluminescenee measurements reveal that the vanadium acceptor level is located at 0.62eV below the conduction band in 6H-SiC. |
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| Keywords: | 6H-SiC semi-insulating vanadium doping compensation vanadium acceptor level |
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