| 适用于无源射频标签的低功耗单栅非挥发性存储器 |
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| 引用本文： | 赵涤燹,闫娜,徐雯,杨立吾,王俊宇,闵昊.适用于无源射频标签的低功耗单栅非挥发性存储器[J].半导体学报,2008,29(1). |
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| 作者姓名： | 赵涤燹 闫娜 徐雯 杨立吾 王俊宇 闵昊 |
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| 作者单位： | 1. 复旦大学专用集成电路与系统国家重点实验室,上海,201203
2. 中芯国际集成电路制造(上海)有限公司设计服务处,上海,201203 |
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| 基金项目： | 国家高技术研究发展计划(863计划) |
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| 摘 要： | 针对低成本、低功耗无源射频电子标签,采用SMIC 0.18μm标准CMOS工艺设计实现了单栅、576bit的非挥发性存储器.存储器单元基于双向Fowler-Nordheim隧穿效应原理并采用普通的pMOS晶体管实现;编程/擦写时间为10ms/16bit.芯片实现块编程和擦写功能,通过提出一种新型的敏感放大器而实现了读功耗的优化.在电源电压为1.2V,数据率为640kHz时,读操作平均消耗电流约为0.8μA.
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| 关 键 词： | 射频识别 单栅 非挥发性存储器 标准CMOS工艺 敏感放大器 低功耗 |
A Low-Power, Single-Poly, Non-Volatile Memory for Passive RFID Tags |
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| Zhao Dixian,Yan Na,Xu Wen,Yang Liwu,Wang Junyu,Min Hao.A Low-Power, Single-Poly, Non-Volatile Memory for Passive RFID Tags[J].Chinese Journal of Semiconductors,2008,29(1). |
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| Authors: | Zhao Dixian Yan Na Xu Wen Yang Liwu Wang Junyu Min Hao |
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| Abstract: | Single-poly,576bit non-volatile memory is designed and implemented in an SMIC 0.18μm standard CMOS process for the purpose of reducing the cost and power of passive RFID tag chips. The memory bit cell is designed with conventional single-poly pMOS transistors, based on the bi-directional Fowler-Nordheim tunneling effect, and the typical program/erase time is 10ms for every 16bits. A new,single-ended sense amplifier is proposed to reduce the power dissipation in the current sensing scheme. The average current consumption of the whole memory chip is 0.8μA for the power supply voltage of 1.2V at a reading rate of 640kHz. |
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| Keywords: | RFID single-poly non-volatile memory standard CMOS process sense amplifier low power |
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