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| AlGaN/GaN背对背肖特基二极管氢气传感器 | |
| 引用本文： | 王新华,王晓亮,冯春,冉军学,肖红领,杨翠柏,王保柱,王军喜. AlGaN/GaN背对背肖特基二极管氢气传感器[J]. 半导体学报, 2008, 29(1): 153-156 |
| 作者姓名： | 王新华 王晓亮 冯春 冉军学 肖红领 杨翠柏 王保柱 王军喜 |
| 作者单位： | 中国科学院半导体研究所,北京,100083 |
| 摘 要： | 通过溅射的方法制作了Pt/AlGaN/GaN背对背肖特基二极管并测试了该器件对氢气的响应.研究了Pt/AlGaN/GaN背对背肖特基二极管在25和100℃时对于10%H2(N2气中)的响应,计算了器件的灵敏度;并比较了两种温度条件下器件对于氢气响应的快慢;空气中的氧气对于器件电流的恢复有重要的作用;最后由热电子发射公式计算了器件在通入10%的氢气前后有效势垒高度的变化. |
| 关 键 词： | GaN 气体传感器 肖特基二极管 |
| 收稿时间： | 2015-08-18 |
| 修稿时间： | 2007-08-10 |
Hydrogen Sensors Based on AlGaN/GaN Back-to-Back Schottky Diodes |
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| Wang Xinhua, Wang Xiaoliang, Feng Chun, Ran Junxue, Xiao Hongling, Yang Cuibai, Wang Baozhu, Wang Junxi. Hydrogen Sensors Based on AlGaN/GaN Back-to-Back Schottky Diodes[J]. Journal of Semiconductors, 2008, In Press. Wang X H, Wang X L, Feng C, Ran J X, Xiao H L, Yang C B, Wang B Z, Wang J X. Hydrogen Sensors Based on AlGaN/GaN Back-to-Back Schottky Diodes[J]. J. Semicond., 2008, 29(1): 153.Export: BibTex EndNote | |
| Authors: | Wang Xinhua Wang Xiaoliang Feng Chun Ran Junxue Xiao Hongling Yang Cuibai Wang Baozhu Wang Junxi |
| Affiliation: | Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China |
| Abstract: | Hydrogen sensors based on AlGaN/GaN back-to-back Schottky diodes have been produced.Platinum is sputtered on the surface of the sample.The response of the device to 10% H2 in N2 is measured at 25~100℃.The oxygen in the air has great influence on the current of the device.Finally,the variation of the Schottky barrier height induced by the hydrogen is calculated. |
| Keywords: | GaN gas sensor Schottky diode |
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