阶段离子束辅助法制备基频减反膜

在研究阶段离子束辅助制备方式对薄膜性质影响的基础上,采用电子枪蒸发及离子束辅助沉积制备了氧化铪及氧化硅单层膜,采用阶段离子束辅助沉积及全程非离子束辅助沉积制备了基频减反膜。测量了所有样品的弱吸收、残余应力和激光损伤阈值。结果发现,相对电子枪热蒸发制备的样品,离子束辅助沉积的单层膜具有大的弱吸收、低的激光损伤阈值,且张应力减小,压应力增加;阶段离子束辅助沉积制备的减反膜剩余应力变小,弱吸收稍微增加,激光损伤阈值从10.91 J/cm²增加到18 J/cm²。分析表明,离子束辅助沉积在引入提高样品激光损伤阈值有利因素的同时,也引入 了不利因素,阶段离子束辅助沉积在引入有利因素的同时,有效减少了不利因素的引入,从而提高了样品的激光损伤阈值。

Antireflective film prepared by periodic ion beam assisted deposition

The HfO₂ and SiO₂ films were coated using ion beam assisted deposition and e-beam deposition,and the antireflective films were coated by periodic ion beam assisted deposition and e-beam deposition also. The weak absorption,residual stress and Laser-Induced Damage Thresholds(LIDT) were measured. Comparing with e-beam deposition,the measured results show that the films coated by ion beam assisted deposition have a higher weak absorption,lower tensile stress and lower LIDT,and the antireflective films prepared by periodic ion beam assisted deposition have a lower residual stress also,but the weak absorption of the films increases a little,and LIDT increases from 10.91 J/cm² to 18 J/cm². The results indicate the periodic ion beam assisted deposition can improve the LIDT effectively,which provides a new way for application of ion beam assisted deposistion to preparation of high threshold laser films.