| 基于Ti掺杂硅量子点的MOSFET结构的电子显微学表征 |
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| 引用本文： | 马圆,尤力平,张小平,俞大鹏.基于Ti掺杂硅量子点的MOSFET结构的电子显微学表征[J].电子显微学报,2007,26(2):110-113. |
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| 作者姓名： | 马圆 尤力平 张小平 俞大鹏 |
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| 作者单位： | 北京大学物理学院北京大学电子显微镜实验室,北京,100871 |
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| 基金项目： | 国家重点基础研究发展计划(973计划) |
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| 摘 要： | 通过自组装生长并结合两步退火处理,在SiO2表面得到了Ti掺杂的Si纳米晶粒量子点.采用高分辨显微分析方法,X射线能谱线扫描和Z衬度扫描透射显微方法对一系列横截面样品进行详细研究,得到了量子点内部的成分分布,相关的试验数据吻合一致,验证了Si量子点MOSFET的结构模型.
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| 关 键 词： | 纳米晶MOSFET内存 扫描透射显微方法 量子点成分分布 |
| 文章编号： | 1000-6281（2007）02-0110-04 |
| 修稿时间： | 2006-12-19 |
Characterization of a nanocrystal metal-oxide -semiconductor field effect transistor(MOSFET) |
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| MA Yuan,YOU Li-ping,ZHANG Xiao-ping,YU Da-peng.Characterization of a nanocrystal metal-oxide -semiconductor field effect transistor(MOSFET)[J].Journal of Chinese Electron Microscopy Society,2007,26(2):110-113. |
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| Authors: | MA Yuan YOU Li-ping ZHANG Xiao-ping YU Da-peng |
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| Affiliation: | School of Physics, Electron Microscopy Laboratory, Peking University, Beijing 100871, China |
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| Abstract: | Si Quantum dots(Ti doped) have been formed by self-assembled growth on SiO_2 surfaces using the low pressure chemical vapor deposition(LPCVD) with two step annealing.High resolution transmission electron microscopy(HRTEM),energy dispersive spectrum(EDS) and scanning transmission electron microscopy(STEM) were used to characterize the cross sectional samples.Composition information reveals the dopant distribution within the quantum dots.Relative experimrntal results which validate structure model of the Quantum dots MOSFET are consistent with each other. |
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| Keywords: | nanocrystal memory STEM composition distribution |
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