一个带自热效应的新型LDMOS解析模型

介绍了一个带自热效应的新型LDMOS解析式模型.通过研究以阈值电压为基础的BSIM3v3模型,增加了对漂移区影响的考虑,同时,加入自热效应影响,且不用引入单独的自热网络,有效地提高了计算效率.模型中引入有物理背景的新参数来描述LDMOS特有的准饱和效应和自热效应.在计算实验中,模拟数据很好地吻合实际器件的测量数据,证明该模型适用于LDMOS功率器件在电路中的仿真.

An Innovative Analytical Model for LDMOS with Self-Heating Effects

An innovative analytical model for LDMOS including self-heating effects was presented.This novel physics-based LDMOS model was developed from threshold-voltage based model,BSIM3v3.Effects of the drain-end drift region were included and self-heating effects were simulated without using separate thermal network.All new parameters of this model have physics meanings.The calculated I-V characteristics from this model are in good agreement with experimental data,which demonstrates its suitability for simulation ...