| 制备纳米级ULSI的极紫外光刻技术 |
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| 引用本文： | 成立,王振宇,朱漪云,刘合祥.制备纳米级ULSI的极紫外光刻技术[J].半导体技术,2005,30(9):28-33. |
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| 作者姓名： | 成立 王振宇 朱漪云 刘合祥 |
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| 作者单位： | 江苏大学电气信息工程学院,江苏,镇江,212013;江苏大学电气信息工程学院,江苏,镇江,212013;江苏大学电气信息工程学院,江苏,镇江,212013;江苏大学电气信息工程学院,江苏,镇江,212013 |
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| 基金项目： | 江苏省高校自然科学基金 |
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| 摘 要： | 在下一代光刻技术中,由于极紫外光刻(EUVL)分辨率高、且具有一定的产量优势及传统光学光刻技术的延伸性,因而是IC业界制备纳米级ULSI器件的首选光刻方案之一.本文论述了EUVL技术的原理、加工工艺和设备,并对比分析了EUVL的生产成本、应用前景及其优缺点.
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| 关 键 词： | 超大规模集成电路 纳米半导体器件制备技术 极紫外光刻 |
| 文章编号： | 1003-353X(2005)09-0028-06 |
Extremely Ultraviolet Lithography Fabrication Technology for Nanometer ULSI Devices |
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| CHENG Li,WANG Zhen-yu,ZHU Yi-yun,LIU He-xiang.Extremely Ultraviolet Lithography Fabrication Technology for Nanometer ULSI Devices[J].Semiconductor Technology,2005,30(9):28-33. |
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| Authors: | CHENG Li WANG Zhen-yu ZHU Yi-yun LIU He-xiang |
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| Abstract: | In the next generation lithography(NGL) technology, extremely ultraviolet lithography(EUVL) has high-resolution, certain output and technical extension property of traditional lithography,so it becomes one of the first-selected lithography schemes for preparing the nanometer ULSI de-vices in IC circles. The principle, technological process and equipments of EUVL are discussed andits production cost, application prospects, advantages and disadvantages are also comparablyanalyzed. |
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| Keywords: | ULSI nanometer semiconductor fabrication technology extremely ultravioletlithography EVVL |
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