| PMMA的反应离子深刻蚀 |
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| 引用本文： | 张丛春,杨春生,丁桂甫,黄龙旺.PMMA的反应离子深刻蚀[J].真空科学与技术学报,2004,24(2):157-160. |
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| 作者姓名： | 张丛春 杨春生 丁桂甫 黄龙旺 |
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| 作者单位： | 薄膜与微细技术教育部重点实验室,微米/纳米加工技术国家级重点实验室,上海交通大学微纳米科学技术研究院,上海,200030 |
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| 摘 要： | 对PMMA进行反应离子深刻蚀以获得高深度比微结构.研究了纯氧刻蚀气体中加入CHF3对刻蚀速率、图形形貌等的影响.纯氧刻蚀PMMA,钻蚀现象严重.加入CHF3后,刻蚀速率随CHF3含量增加而下降.加入适量CHF3,可以在侧壁形成钝化层,保护侧壁不受钻蚀.当CHF3含量为40%,刻蚀功率30 W,工作气压为4 Pa时,即使刻蚀深度达到400 μm,侧壁仍然陡直,刻蚀深宽比大于10.
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| 关 键 词： | 反应离子刻蚀 高深宽比 侧壁钝化 |
| 文章编号： | 1672-7126(2004)02-0157-04 |
| 修稿时间： | 2003年8月7日 |
Deep Reactive Ion Etching of Polymethylmethacrylate |
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| Zhang Congchun,Yang Chunsheng ,Ding Guifu and Huang Longwang Key laboratory for Thin Film and Microfabrication Technology of Ministry of Education,Research Insitute of Micro/nanometer Science and Technology,Shanghai Jiaotong University,Shanghai,China.Deep Reactive Ion Etching of Polymethylmethacrylate[J].JOurnal of Vacuum Science and Technology,2004,24(2):157-160. |
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| Authors: | Zhang Congchun Yang Chunsheng Ding Guifu and Huang Longwang Key laboratory for Thin Film and Microfabrication Technology of Ministry of Education Research Insitute of Micro/nanometer Science and Technology Shanghai Jiaotong University Shanghai China |
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| Affiliation: | Zhang Congchun,Yang Chunsheng *,Ding Guifu and Huang Longwang Key laboratory for Thin Film and Microfabrication Technology of Ministry of Education,Research Insitute of Micro/nanometer Science and Technology,Shanghai Jiaotong University,Shanghai,200030,China |
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| Abstract: | |
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| Keywords: | PMMA |
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