| 掩膜对GaAs基二维光子晶体ICP刻蚀效果的影响 |
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| 引用本文： | 徐晨,王宝强,刘英明,解意洋,沈光地.掩膜对GaAs基二维光子晶体ICP刻蚀效果的影响[J].纳米技术与精密工程,2011,9(3):279-282. |
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| 作者姓名： | 徐晨 王宝强 刘英明 解意洋 沈光地 |
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| 作者单位： | 北京工业大学北京市光电子技术实验室,北京,100124 |
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| 基金项目： | 国家高技术研究发展计划(863计划)资助项目，北京市自然科学基金资助项目 |
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| 摘 要： | 结合刻蚀GaAs基光子晶体在光子晶体垂直腔面发射激光器中的应用,研究了光刻胶、SiO2掩膜的特性以及对GaAs基二维光子晶体ICP刻蚀效果的影响,并分析了ICP刻蚀小尺寸光子晶体时,造成底面凹凸不平、侧壁粗糙、垂直度差的原因.最后,调整工艺条件,利用BP212-7CP光刻胶做掩膜,成功制作了直径为1.2～4.0μm、深度为1.5μm的侧壁光滑垂直、底面平整的高质量光子晶体结构.
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| 关 键 词： | 掩膜 光子晶体 感应耦合等离子体(ICP) GaAs |
Impact of Mask on the Effect of ICP Etched on GaAs-Based Two-Dimensional Photonic Crystals |
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| XU Chen,WANG Bao-qiang,LIU Ying-ming,XIE Yi-yang,SHEN Guang-di.Impact of Mask on the Effect of ICP Etched on GaAs-Based Two-Dimensional Photonic Crystals[J].Nanotechnology and Precision Engineering,2011,9(3):279-282. |
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| Authors: | XU Chen WANG Bao-qiang LIU Ying-ming XIE Yi-yang SHEN Guang-di |
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| Affiliation: | XU Chen,WANG Bao-qiang,LIU Ying-ming,XIE Yi-yang,SHEN Guang-di(Beijing Optoelectronic Technology Laboratory,Beijing University of Technology,Beijing 100124,China) |
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| Abstract: | Based on the application of etching of GaAs-based photonic crystals to photonic crystals vertical cavity surface emitting laser,the characteristics of photoresist and SiO2 masks were studied and their impact on the effect of ICP etched on GaAs-based two-dimensional photonic crystals was explored.Reasons for accidented flat,bad vertical degree and coarse sidewall were analyzed when small size photonic crystals were etched.Finally,by modification of the fabrication conditions,high quality photonic crystals wi... |
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| Keywords: | GaAs |
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