| AlN薄膜异质结构声波激发特性研究 |
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| 引用本文： | 齐梦珂,李孟辉,程一民,潘虹芝,曹亮,牟笑静.AlN薄膜异质结构声波激发特性研究[J].压电与声光,2022,44(5):709-712. |
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| 作者姓名： | 齐梦珂 李孟辉 程一民 潘虹芝 曹亮 牟笑静 |
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| 作者单位： | 重庆大学 新型微纳器件与系统技术国防重点学科实验室,重庆 400060;中国电子科技集团公司第二十六研究所,重庆 400060 |
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| 基金项目： | 国家重点研发计划基金资助项目(No．2016YFB0402700，No．2016YFB0402702)；国家自然科学基金资助项目(No．52075061)；中央高校基础研究基金资助项目(No．2019CDCGGD320) |
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| 摘 要： | 该文分别开发了两种基于 AlN 压电材料和原子数分数为10%的Sc掺杂 AlN 压电材料的薄膜叠层异质谐振器。通过有限元仿真和实验对比分析了器件的频率温度性能和 Sc掺杂对谐振器声激励的影响。结果表明，Sc掺杂可能会影响压电薄膜叠层谐振器所激励声波的谐振频率、机电耦合系数和对应的频率温度系数(TCF)， 且对所激励声波的正反谐振点的 TCF影响不同。此研究在传感及滤波器件领域极具应用潜力。
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| 关 键 词： | 谐振器 声波激励 氮化铝钪 温度稳定性 机电耦合系数 |
Study on Acoustic Excitation Characteristics of AlN Thin Film Heterogeneous Structure |
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| Qi Mengke,Li Menghui,Cheng Yimin,Pan Hongzhi,Cao Liang,Mou Xiaojing.Study on Acoustic Excitation Characteristics of AlN Thin Film Heterogeneous Structure[J].Piezoelectrics & Acoustooptics,2022,44(5):709-712. |
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| Authors: | Qi Mengke Li Menghui Cheng Yimin Pan Hongzhi Cao Liang Mou Xiaojing |
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| Affiliation: | Key Laboratory of Optoelectronic Technology and Systems, Chongqing University, Chongqing 400044 , China;The 2 6.th Institute of China Electronic Technology Group Corporation, Chongqing 400060 , China |
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| Abstract: | Two kinds of thin film heterogeneously stacked resonators based on AlN piezoelectric material and 10% Sc-doped AlN piezoelectric material respectively have been developed in this paper. The effect of Sc doping on the acoustic excitation of the resonator and the frequency-temperature performance of the device are compared and analyzed by the finite element simulation and experiment. The results show that Sc doping may affect the resonant frequency, electromechanical coupling coefficient and corresponding frequency-temperature coefficient (TCF) of the acoustic wave excited by the piezoelectric thin-film stacked resonator, and has different effects on the TCF of the resonant and anti-resonant points of the excited acoustic wave. This work has great application potential in the field of sensors and filters. |
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