Numerical analysis of short-circuit safe operating area forp-channel and n-channel IGBTs |
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Authors: | Iwamuro N Okamoto A Tagami S Motoyama H |
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Affiliation: | Fuji Electr. Corp. Res. & Dev. Ltd., Yokosuka ; |
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Abstract: | The mechanisms of destructive failure of an insulated gate bipolar transistor (IGBT) at short-circuit state are discussed. Results from two-dimensional numerical simulation of p-channel and n-channel IGBTs are presented. It is found that there are two types of destructive failure mechanisms: a secondary breakdown and a latchup. Which type is dominant in p-channel and n-channel IGBTs depends on an absolute value of forward voltage |VCE|. At moderately low |V CE|, the p-channel IGBT is destroyed by secondary breakdown, and the n-channel IGBT, by latchup. This is due to the difference of a type of flowing carrier crossing a base-collector junction of wide base transistor and ionization rates of electrons and holes |
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