Effects of N2O anneal and reoxidation on thermal oxidecharacteristics |
| |
Authors: | Liu Z. Wann H.-J. Ko P.K. Hu C. Cheng Y.C. |
| |
Affiliation: | Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA; |
| |
Abstract: | ![]() The effects of post-oxidation N2O anneal on conventional thermal oxide are studied. The oxide thickness increase resulting from N2O anneal is found to be self-limiting and insensitive to initial oxide thickness, which makes the thickness of the resulting oxide easy to control. The N2O anneal leads to increased resistance against injection-induced interface-state generation and to reduced hole trapping. No further quality improvement is found when the N2O-annealed oxide is subject to an additional reoxidation. This finding confirms that nitrogen incorporation in the absence of hydrogen is responsible for improving the quality of the conventional oxides |
| |
Keywords: | |
|
|