Thermal desorption of Ge native oxides and the loss of Ge from the surface |
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Authors: | Jungwoo Oh Joe C Campbell |
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Affiliation: | (1) The University of Texas at Austin, 78712 Austin, TX |
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Abstract: | The annealing behavior of Ge native oxides has been studied with x-ray photoemission spectroscopy (XPS). The native oxides
were primarily GeO2 with small amounts of GeOx (x<2). Annealing was performed using a rapid thermal processor (RTP) with a N2 purge at atmospheric pressure. Ion-implanted Ge substrates were used to investigate the loss of Ge from the surface due to
thermal desorption of Ge oxides. It was found that thermal desorption of volatile Ge oxides and oxidization of Ge take place
successively, which results in the loss of Ge from the surface. |
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Keywords: | Ge native oxides x-ray photoemission spectroscopy (XPS) thermal desorption |
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