Ultralow-k silicon containing fluorocarbon films prepared by plasma-enhanced chemical vapor deposition |
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Authors: | Yoonyoung Jin P K Ajmera G S Lee Varshni Singh |
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Affiliation: | (1) Center for Advanced Microstructures and Devices (CAMD), Louisiana State University, 70806 Baton Rouge, LA;(2) Department of Electrical and Computer Engineering, Louisiana State University, USA;(3) Department of Electrical Engineering, University of Texas at Dallas, 75083 Richardson, TX;(4) Department of Mechanical Engineering, Louisiana State University, USA |
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Abstract: | Low dielectric constant materials as interlayer dielectrics (ILDs) offer a way to reduce the RC time delay in high-performance
ultra-large-scale integration (ULSI) circuits. Fluorocarbon films containing silicon have been developed for interlayer applications
below 50-nm linewidth technology. The preparation of the films was carried out by plasma-enhanced chemical vapor deposition
(PECVD) using gas precursors of tetrafluorocarbon as the source of active species and disilane (5 vol.% in helium) as a reducing
agent to control the ratio of F/C in the films. The basic properties of the low dielectric constant (low-k) interlayer dielectric
films are studied as a function of the fabrication process parameters. The electrical, mechanical, chemical, and thermal properties
were evaluated including dielectric constant, surface planarity, hardness, residual stress, chemical bond structure, and shrinkage
upon heat treatments. The deposition process conditions were optimized for film thermal stability while maintaining a relative
dielectric value as low as 2.0. The average breakdown field strength was 4.74 MV/cm. The optical energy gap was in the range
2.2–2.4 eV. The hardness and residual stress in the optimized processed SiCF films were, respectively, measured to be in the
range 1.4–1.78 GPa and in the range 11.6–23.2 MPa of compressive stress. |
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Keywords: | Ultralow-k material silicon containing fluorocarbon films plasma processing and deposition |
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