SnO2退火温度对钙钛矿太阳能电池性能的影响

电子传输层是钙钛矿太阳能电池的关键部分, 起到阻挡空穴、传输电子和减少电子空穴复合的作用。本研究采用低温溶液法制备SnO₂薄膜作为钙钛矿电池的电子传输层, 研究SnO₂的退火温度对电子传输层微观形貌、物理性能以及钙钛矿太阳能电池性能的影响。结果表明: 当退火温度为60、90、120和240 ℃时, SnO₂薄膜表面存在较多的孔隙; 而退火温度为150、180和210 ℃时, 薄膜表面孔隙较少。在实验温度下, 制备的SnO₂薄膜为四方相, FTO玻璃上涂覆SnO₂薄膜后其透过率要优于空白FTO玻璃的透过率。当SnO₂退火温度为180 ℃时, 薄膜的电子迁移率最高, 钙钛矿电池具有最佳的传输电阻和复合电阻, 所得电池的性能最优, 其光电转换效率为17.28%, 开路电压为1.09 V, 短路电流为20.91 mA/cm², 填充因子为75.91%。

Effect of SnO2 Annealing Temperature on the Performance of Perovskite Solar Cells

Electron transport layer is a key part for perovskite solar cell(PSC),which can block holes and transmit electrons to reduce recombination.In this study,SnO₂ was synthesized with low-temperature solution-processed method and used as electronic transport layer for perovskite solar cells.The influence of annealing temperature on the properties of SnO₂ films and PSCs were systematically studied.The results showed that with the annealing temperatures at 60,90,120,240℃,the surfaces of SnO₂ films own more pores;while annealed at 150,180,210℃,the corresponding surfaces show fewer pores.It was found that the transmittance of FTO glass covered with SnO₂ films is better than that of the bare FTO glass.With SnO₂ annealed at 180℃,the electron mobility of the thin film is the highest.The corresponding PSC possesses the best transmission resistance,composite resistance,and superior photovoltaic performance.The photoelectric conversion efficiency,the open-circuit voltage,the short-circuit current and the filling factor were 17.28%,1.09 V,20.91 mA/cm²and 75.91%,respectively.