Model-based analysis of the silica glass film etch mechanism in CF4/O2 inductively coupled plasma |
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| Authors: | Mansu Kim Nam-Ki Min Alexander Efremov Hyun Woo Lee Chi-Sun Park Kwang-Ho Kwon |
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| Affiliation: | (1) Department of Control and Instrumentation Engineering, Korea University, Jochiwon, Chungnam, 339-700, South Korea;(2) Department of Electronic Devices & Materials Technology, State University of Chemistry & Technology, 7 F.Engels st., Ivanovo, 153000, Russia;(3) Department of Computer and Applied Physics, Hanseo University, Haemi-myun, Seosan-City, Chungnam, 356-706, South Korea;(4) Department of Electronics, Hanseo University, Haemi-myun, Seosan-City, Chungnam, 356-706, South Korea |
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| Abstract: | The analysis of the Er-doped silica glass films (62%SiO2–30%B2O3–8%P2O5 + 0.2 wt%. Er2O3) etch mechanism in the CF4/O2 inductively coupled plasma was carried out using the combination of simplified models for plasma chemistry and etch kinetics. As the O2 mixing ratio in the CF4/O2 plasma increases from 0% to 30%, the etch rate decreases monotonically in the range of 385–190 nm/min that contradicts with the behavior of F atom density and flux. From the model-based analysis, it was found that, at low ion bombardment energies, the etch process followed the formal kinetics of ion-assisted chemical reaction and was controlled by both neutral and ion fluxes. |
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