| 新型高压大功率器件IGCT的建模与仿真 |
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| 引用本文： | 于克训,任章鳌,娄振袖,潘垣.新型高压大功率器件IGCT的建模与仿真[J].湖北工业大学学报,2010,25(1):89-94. |
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| 作者姓名： | 于克训 任章鳌 娄振袖 潘垣 |
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| 作者单位： | 华中科技大学电气与电子工程学院,湖北,武汉,430074 |
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| 摘 要： | 集成门极换向晶闸管(IGCT)是新型电力半导体开关,具有耐压高、电流大、开关频率高、开关损耗低等优越性能,尤其适用于高压大功率电力电子装置.目前通用电路仿真软件中还没有专门的IGCT仿真模型,不能满足可靠的仿真性能的要求.基于电力电子器件的物理现象,建立IGCT模型的方法有:功能模型法、电学模型法、集总电荷模型法和物理模型法等.对上述几种建模方法分别进行了仿真研究后,对比分析各模型开关动作过程和器件内部物理现象,比较它们之间的优缺点,分析出各种模型的适用范围.
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| 关 键 词： | 集成门极换向晶闸管 电力电子装置 物理现象 建模 仿真 |
A Study of Modeling and Simulation of High-voltage High-power Device-IGCT |
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| YU Ke-xun,REN Zhang-ao,LOU Zhen-xiu,PAN Yuan.A Study of Modeling and Simulation of High-voltage High-power Device-IGCT[J].Journal of Hubei University of Technology,2010,25(1):89-94. |
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| Authors: | YU Ke-xun REN Zhang-ao LOU Zhen-xiu PAN Yuan |
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| Affiliation: | School of Electrical and Electronic Engin.;Huazhong Univ.of Sci.and Tech.;Wuhan 430074;China |
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| Abstract: | Integrated Gate Commutated Thyristor(IGCT) has been widely applied in areas of high-voltage high-power converter due to its superior performance.However,with the improvement of the reliable requirements of the device,and there are not independent model of IGCT available currently for various types of simulation software.Therefore,it is significant to study the modeling and simulation of IGCT.Functional model,electrical model,lumped charge model and physical model etc have been established based on the physi... |
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| Keywords: | integrated gate commutated thyristor （igct） physical phenomena power electronic device modeling and simulation |
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