| 一种高精度低温漂带隙基准源设计 |
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| 引用本文： | 李帅人,周晓明,吴家国. 一种高精度低温漂带隙基准源设计[J]. 电子科技, 2012, 25(9): 88-90,114. DOI: 10.3969/j.issn.1007-7820.2012.09.027 |
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| 作者姓名： | 李帅人 周晓明 吴家国 |
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| 作者单位： | 1.华南理工大学电子与信息学院,广东广州,510640;2.华南理工大学理学院,广东广州,510640 |
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| 摘 要： | 基于TSMC40nmCMOS工艺设计了一种高精度带隙基准电路。采用Spectre工具仿真,结果表明,带隙基准输出电压在温度为-40—125℃的范围内具有10×10^-6／℃的温度系数,在电源电压在1．5-5．5V变化时,基准输出电压随电源电压变化仅为0．42mV,变化率为0．23mv／V,采用共源共栅电流镜后,带隙基准在低频下的电源电压抑制比为-72dB。
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| 关 键 词： | 带隙基准 温度系数 电源电压抑制比 高阶补偿 |
Design of a High Precision and Low Temperature Drift Bandgap Reference |
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| LI Shuairen,ZHOU Xiaoming,WU Jiaguo. Design of a High Precision and Low Temperature Drift Bandgap Reference[J]. Electronic Science and Technology, 2012, 25(9): 88-90,114. DOI: 10.3969/j.issn.1007-7820.2012.09.027 |
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| Authors: | LI Shuairen ZHOU Xiaoming WU Jiaguo |
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| Affiliation: | 1.School of Electronic and Information,South China University of Technology,Guangzhou 510640,China; 2.School of Sciences,South China University of Technology,Guangzhou 510640,China) |
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| Abstract: | A High Precision CMOS voltage reference circuit is designed by the TSMC 40 nm CMOS process.Spectre simulation shows that the temperature coefficient is 10×10-6/℃ in the temperature range from-40 to 125.The change of the voltage reference is 0.42 mV,and the change rate is 0.23 mV/V in the power supply voltage range of 1.5~3.3 V.PSRR is 72 dB after using the cascode current mirror. |
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| Keywords: | bandgap reference temperature coefficient power supply voltage rejection ratio high order com- pensation |
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