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室温固相合成掺杂ZnO纳米粉体制备ZnO压敏电阻
引用本文:刘桂香,徐光亮,罗庆平.室温固相合成掺杂ZnO纳米粉体制备ZnO压敏电阻[J].精细化工,2006,23(9):841-844,848.
作者姓名:刘桂香  徐光亮  罗庆平
作者单位:西南科技大学,材料科学与工程学院,四川,绵阳,621010
基金项目:国防科技应用基础研究基金
摘    要:以金属离子盐和草酸为原料,采用室温固相化学反应合成掺杂ZnO前驱物,根据DSC-TG分析结果,将其在450℃热分解2 h,得到掺杂ZnO粉体,并用此粉体制备了片式ZnO压敏电阻。借助XRD、TEM、BET等检测手段对粉体产物的物相、形貌、粒度等进行了表征。研究了烧结温度对ZnO压敏电阻电性能的影响。结果表明,所制备的粉体为平均粒径24 nm左右、颗粒呈球状、分散性好的纤锌矿结构掺杂ZnO。在1 080℃烧结时,ZnO压敏电阻的综合电性能达到最佳,电位梯度为791.64 V/mm,非线性系数为24.36,漏电流为43μA。

关 键 词:室温固相反应  掺杂ZnO纳米粉体  压敏电阻
文章编号:1003-5214(2006)09-0841-05
收稿时间:2005-12-07
修稿时间:2005-12-072006-04-17

Preparation of Doped ZnO Nano-powders and ZnO Varistors by Solid-state Reaction at Room Temperature
LIU Gui-xiang,XU Guang-liang,LUO Qing-ping.Preparation of Doped ZnO Nano-powders and ZnO Varistors by Solid-state Reaction at Room Temperature[J].Fine Chemicals,2006,23(9):841-844,848.
Authors:LIU Gui-xiang  XU Guang-liang  LUO Qing-ping
Affiliation:College of Material Science and Engineering, Southwest University of Science and Technology, Mianyang 621010, Sichuan, China
Abstract:Using Zn(NO_3)_2·6H_2O,H_2C_2O_4 and additives of other metal salts as raw materials,ZnO precursor was synthesized by solid-state reaction at room temperature,and doped ZnO nano-powders were obtained by decomposing the precursor at 450 ℃ for 2 h.Then ZnO varistors were prepared at different sintering temperatures.The powders were determined by XRD,TEM and BET,and electric properties of ZnO varistors were discussed in detail.The results show that the doped ZnO nano-powders are spherical and dispersive,with grain size about 24 nm.The general electric properties of ZnO varistors sintered at(1 080) ℃ are the best:potential gradient 791.64 V/mm,nonlinear coefficient 24.36 and leakage current 43 μA.
Keywords:solid-state reaction at room temperature  doped ZnO nano-powders  varistors
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