| GaN基HEMT器件的表面陷阱电荷输运过程实验研究 |
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| 引用本文： | 罗谦,杜江锋,靳翀,龙飞,周伟,夏建新,杨谟华.GaN基HEMT器件的表面陷阱电荷输运过程实验研究[J].微电子学,2006,36(6):722-724,735. |
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| 作者姓名： | 罗谦 杜江锋 靳翀 龙飞 周伟 夏建新 杨谟华 |
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| 作者单位： | 电子科技大学,微电子学与固体电子学学院,四川,成都,610054 |
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| 摘 要： | 基于特制的无台面AlGaN/GaN HEMT,设计了一种实验方法,用以研究AlGaN/GaN外延表面陷阱态间的电荷输运过程。经实验证实,在器件电流崩塌效应中,存在表面陷阱电荷输运,并确定了相关时间常数。针对应力后电流崩塌驰豫过程,实验监测到小于0.1 s和大于10 s两类时间常数,其中较大的常数对应于表面陷阱电荷的输运过程。此结论可望用于对AlGaN/GaNHEMT电流崩塌效应进一步的理论探索和相关的器件研究。
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| 关 键 词： | GaN HEMT 电荷输运 表面态 电流崩塌 |
| 文章编号： | 1004-3365（2006）06-0722-03 |
| 收稿时间： | 2006-04-25 |
| 修稿时间： | 2006-04-252006-07-03 |
An Experimental Investigation into Transportation Process of rapped Surface Charges of GaN-Based HEMT's |
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| LUO Qian,DU Jiang-feng,JIN Chong,LONG Fei,ZHOU Wei,XIA Jian-xin,YANG Mo-hua.An Experimental Investigation into Transportation Process of rapped Surface Charges of GaN-Based HEMT''''s[J].Microelectronics,2006,36(6):722-724,735. |
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| Authors: | LUO Qian DU Jiang-feng JIN Chong LONG Fei ZHOU Wei XIA Jian-xin YANG Mo-hua |
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| Affiliation: | School o f Mieroelec. and Sol. Sta. Elec. , Univ. of Elec. Sci. and Technol. of China, Chengdu , Sichuan 610054, P. R. China |
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| Abstract: | Based on a specially designed AlGaN/GaN HEMT,transportation process of the trapped surface charges is investigated.It is confirmed that such process affects the current collapse effect.The relative time constants are determined by the experiment.With the measurements of current collapse effects,two different types of time constants,which are smaller than 0.1 s and larger than 10 s,respectively, are detected.The larger type corresponds to transportation process of the trapped surface charges.This conclusion may be used in further theoretic study and device development of AlGaN/GaN HEMT's. |
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| Keywords: | GaN HEMT Surface state Current collapse |
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