Study of impurity induced modifications in amorphous N-type (GeSe3·5)100?x
Bi
x
using high pressure technique |
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| Authors: | KL Bhatia G Parthasarathy ESR Gopal |
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| Affiliation: | (1) Department of Physics, Maharshi Dayanand University, 124 001 Rohtak, India;(2) Instrumentation and Services Unit, Indian Institute of Science, 560 012 Bangalore, India;(3) Present address: Department of Physics, India |
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| Abstract: | The technique of high pressure is utilized to study the carrier transport behaviour in doped and undoped bulk amorphous (GeSe3·5)100−x
Bi
x
(x=0, 2, 4, 10) down to liquid nitrogen temperature to observe impurity induced modifications in amorphous semiconductors. It
is observed that pressure induced effects in lightly doped (2 at % Bi) and heavily doped (x=4, 10) semiconductors are markedly different. Results are discussed in view of the incorporation behaviour of the bismuth
impurity. |
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| Keywords: | Amorphous semiconductors pressure induced effects chalcogenide glasses doping of chalcogenide glasses |
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