Inductively coupled plasma etching for large format HgCdTe focal plane array fabrication |
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Authors: | E P G Smith G M Venzor M D Newton M V Liguori J K Gleason R E Bornfreund S M Johnson J D Benson A J Stoltz J B Varesi J H Dinan W A Radford |
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Affiliation: | (1) Raytheon Vision Systems, 93117 Goleta, CA;(2) Night Vision and Electronic Sensors Directorate, 22060 Ft Belvoir, VA |
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Abstract: | Inductively coupled plasma (ICP) using hydrogen-based gas chemistry has been developed to meet requirements for deep HgCdTe
mesa etching and shallow CdTe passivation etching in large format HgCdTe infrared focal plane array (FPA) fabrication. Large
format 2048×2048, 20-μm unit-cell short wavelength infrared (SWIR) and 2560×512, 25-μm unit-cell midwavelength infrared (MWIR)
double-layer heterojunction (DLHJ) p-on-n HgCdTe FPAs fabricated using ICP processing exhibit >99% pixel operability. The
HgCdTe FPAs are grown by molecular beam epitaxy (MBE) on Si substrates with suitable buffer layers. Midwavelength infrared
detectors fabricated from 4-in. MBE-grown HgCdTe/Si substrates using ICP for mesa delineation and CdTe passivation etching
demonstrate measured spectral characteristics, RoA product, and quantum efficiency comparable to detectors fabricated using
wet chemical processes. Mechanical samples prepared to examine physical characteristics of ICP reveal plasma with high energy
and low ion angle distribution, which is necessary for fine definition, high-aspect ratio mesa etching with accurate replication
of photolithographic mask dimensions. |
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Keywords: | HgCdTe dry etching inductively coupled plasma (ICP) large format midwavelength infrared (MWIR) short-wavelength infrared (SWIR) molecular beam epitaxy (MBE) liquid phase epitaxy (LPE) |
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