X-ray-emission study of the structure of Si:H layers formed by low-energy hydrogen-ion implantation |
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| Authors: | V. R. Galakhov I. V. Antonova S. N. Shamin V. I. Aksenova V. I. Obodnikov A. K. Gutakovskii V. P. Popov |
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| Affiliation: | (1) Institute of Metal Physics, Ural Division, Russian Academy of Sciences, ul. S. Kovalevskoi 18, Yekaterinburg, 620219, Russia;(2) Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090, Russia |
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| Abstract: | Amorphous silicon layers formed by implantation of 24-keV hydrogen ions into SiO2/Si and Si with doses of 2.7×1017 and 2.1×1017 cm?2, respectively, were studied using ultrasoft X-ray emission spectroscopy with variations in the energy of excitation electrons. It is ascertained that the surface silicon layer with a thickness as large as 150–200 nm is amorphized as a result of implantation. Implantation of hydrogen ions into silicon coated with an oxide layer brings about the formation of a hydrogenated silicon layer, which is highly stable thermally. |
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