| Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition |
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| 作者姓名： | LIN Tao CAI Dao-min LI Xian-jie JIANG Li ZHANG Guang-ze |
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| 作者单位： | [1]Department of Electronic Engineering, Xi＇an University of Technology, Xi＇an 710048, CHN; [2]Hebei Semiconductor Research Institute, Shijiazhuang 050051, CHN; [3]Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, CHN |
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| 基金项目： | Foundation item： Chinese High Technology Developing Plan（2002AA312040） |
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| 摘 要： | High performance InP/InGaAs heterojunction bipolar transistors(HBTs) have been widely used in high-speed electronic devices and optoelectronic integrated circuits. InP-based HBTs were fabricated by low pressure metal organic chemical vapor deposition(MOCVD) and wet chemical etching. The sub-collector and collector were grown at 655 ℃ and other layers at 550 ℃. To suppress the Zn out-diffusion in HBT, base layer was grown with a 16-minute growth interruption. Fabricated HBTs with emitter size of 2.5×20 μm2 showed current gain of 70～90, breakdown voltage(BVCE0)＞2 V, cut-off frequency(fT) of 60 GHz and the maximum relaxation frequency(fMAX) of 70 GHz.
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| 关 键 词： | 异质结 二极晶体管 有机金属化学汽相淀积 压力 |
| 文章编号： | 1007-0206（2007）03-0215-03 |
| 收稿时间： | 2007/2/15 |
| 修稿时间： | 2007-02-152007-04-15 |
Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition |
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| LIN Tao CAI Dao-min LI Xian-jie JIANG Li ZHANG Guang-ze.Zn-doped InGaAs Base Heterojunction Bipolar Transistors Grown by Low Pressure Metal Organic Chemical Vapor Deposition[J].Semiconductor Photonics and Technology,2007,13(3):215-217,234. |
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| Authors: | LIN Tao CAI Dao-min LI Xian-jie JIANG Li ZHANG Guang-ze |
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| Abstract: | High performance InP/InGaAs heterojunction bipolar transistors(HBTs) have been widely used in high-speed electronic devices and optoelectronic integrated circuits. InP-based HBTs were fabricated by low pressure metal organic chemical vapor deposition(MOCVD) and wet chemical etching. The sub-collector and collector were grown at 655℃and other layers at 550℃. To suppress the Zn out-diffusion in HBT, base layer was grown with a 16-minute growth interruption. Fabricated HBTs with emitter size of 2.5×20 μm2 showed current gain of 70~90, breakdown voltage(BVCE0)>2 V, cut-off frequency(fT) of 60 GHz and the maximum relaxation frequency(fMAX) of 70 GHz. |
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| Keywords: | heterojunction bipolar transistors MOCVD InP |
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